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Evidence for formation of multi-quantum dots in hydrogenated graphene

Chiashain Chuang12, Reuben K Puddy1, Malcolm R Connolly1, Shun-Tsung Lo3, Huang-De Lin2, Tse-Ming Chen4, Charles G Smith1* and Chi-Te Liang23*

Author Affiliations

1 Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK

2 Department of Physics, National Taiwan University, Taipei, 106, Taiwan

3 Graduate Institute of Applied Physics, National Taiwan University, Taipei, 106, Taiwan

4 Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan

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Nanoscale Research Letters 2012, 7:459  doi:10.1186/1556-276X-7-459

Published: 16 August 2012


We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called ‘stochastic Coulomb blockade’. A possible explanation for the formation of the multi-quantum dots, which is not observed in pristine graphene to date, was attributed to the impurities and defects unintentionally decorated on a single-layer graphene flake which was not treated with the thermal annealing process. Graphene multi-quantum dots developed around impurities and defect sites during the hydrogen plasma exposure process.

Multi-quantum dots; Single-layer graphene flake; Coulomb peaks