|
Resolution: standard / high Figure 3.
XRD patterns of the GaOOH NRAs grown on Si substrates. (a) Without and (b) with an ATO seed layer under a cathodic voltage of −2 V at 80°C.
Lee et al. Nanoscale Research Letters 2012 7:458 doi:10.1186/1556-276X-7-458 |
