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Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing

Marouan Khalifa1, Messaoud Hajji12* and Hatem Ezzaouia1

Author affiliations

1 Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie (CRTEn), Technopôle de Borj-Cédria BP 95, Hammam-Lif, 2050, Tunisia

2 Institut Supérieur d’Electronique et de Communication de Sfax (ISECS), Route Menzel Chaker Km 0.5 BP 868, Sfax, 3018, Tunisia

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Citation and License

Nanoscale Research Letters 2012, 7:444  doi:10.1186/1556-276X-7-444

Published: 8 August 2012


Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.

Silicon powder; Porous silicon; Vapor-etching; Thermal annealing; Gettering; ICP-AES