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Abnormal conductivity behavior in porous lead telluride films

Sergey P Zimin1*, Egor S Gorlachev12 and Fedor O Skok1

Author Affiliations

1 Microelectronics Department, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl, 150000, Russia

2 Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl, 150007, Russia

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Nanoscale Research Letters 2012, 7:442  doi:10.1186/1556-276X-7-442

Published: 8 August 2012


We report the experimental observation of the novel phenomenon of the resistivity decrease in porous PbTe layers during the pore formation process. Investigations were performed on the n-PbTe films with 2.3-μm thickness, which were near the point of the conductivity-type inversion at room temperature. Anodic electrochemical treatment for the porous layers with 41% to 52% porosity fabrication was performed using a KOH-based Norr electrolyte solution. For the porous lead telluride layers, the resistivity value at 300 K decreased 2.5 to 3 times. For the explanation of the observed phenomenon, a physical model is proposed which takes into account the Pb/Te ratio change during the anodic treatment.

Porous semiconductors; Porosity; Lead telluride; Electrical conductivity; 81.05.Rm; 71.20.Nr; 72.60. + g