Abnormal conductivity behavior in porous lead telluride films
1 Microelectronics Department, Yaroslavl State University, Sovetskaya Street 14, Yaroslavl, 150000, Russia
2 Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Universitetskaya Street 21, Yaroslavl, 150007, Russia
Nanoscale Research Letters 2012, 7:442 doi:10.1186/1556-276X-7-442Published: 8 August 2012
We report the experimental observation of the novel phenomenon of the resistivity decrease in porous PbTe layers during the pore formation process. Investigations were performed on the n-PbTe films with 2.3-μm thickness, which were near the point of the conductivity-type inversion at room temperature. Anodic electrochemical treatment for the porous layers with 41% to 52% porosity fabrication was performed using a KOH-based Norr electrolyte solution. For the porous lead telluride layers, the resistivity value at 300 K decreased 2.5 to 3 times. For the explanation of the observed phenomenon, a physical model is proposed which takes into account the Pb/Te ratio change during the anodic treatment.