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Controlled synthesis of bilayer graphene on nickel

Ahmad Umair and Hassan Raza*

Author Affiliations

Department of Electrical and Computer Engineering, University of Iowa, Iowa City, IA, 52242, USA

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Nanoscale Research Letters 2012, 7:437  doi:10.1186/1556-276X-7-437

Published: 6 August 2012


We report a uniform and low-defect synthesis of bilayer graphene on evaporated polycrystalline nickel films. We used atmospheric pressure chemical vapor deposition with ultra-fast substrate cooling after exposure to methane at 1,000°C. The optimized process parameters, i.e., growth time, annealing profile and flow rates of various gases, are reported. By using Raman spectroscopy mapping, the ratio of 2D to G peak intensities (I2D/IG) is in the range of 0.9 to 1.6 over 96% of the 200 μm × 200 μm area. Moreover, the average ratio of D to G peak intensities (ID/IG) is about 0.1.

Bilayer graphene; Chemical vapor deposition; Raman spectroscopy