Figure 4.

Relationship between electron mobility of 2DEG and applied gate bias at room temperature. They are for samples with drain-to-source distances of 100 (a), 60 (b), 20 (c), and 15 and 9 μm (d); (a) is referenced from our former literature [6].

Lv et al. Nanoscale Research Letters 2012 7:434   doi:10.1186/1556-276X-7-434
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