SpringerOpen Newsletter

Receive periodic news and updates relating to SpringerOpen.

Open Access Email this article to a friend

Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin*, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Yingxia Yu, Zhihong Feng and Zhanguo Wang

Nanoscale Research Letters 2012, 7:434  doi:10.1186/1556-276X-7-434

Fields marked * are required


Multiple email addresses should be separated with commas or semicolons.
How can I ensure that I receive Nanoscale Research Letters's emails?