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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Yuanjie Lv, Zhaojun Lin*, Lingguo Meng, Chongbiao Luan, Zhifang Cao, Yingxia Yu, Zhihong Feng and Zhanguo Wang

Nanoscale Research Letters 2012, 7:434  doi:10.1186/1556-276X-7-434

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