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High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

Szu-Hung Chen3, Wen-Shiang Liao2*, Hsin-Chia Yang1, Shea-Jue Wang4, Yue-Gie Liaw5, Hao Wang2*, Haoshuang Gu2 and Mu-Chun Wang1*

Author affiliations

1 Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan

2 1Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu, 30401, Taiwan

3 National Nano Device Laboratories, Hsinchu 30078, Taiwan

4 Department of Materials and Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan

5 ADATA Technology Company, New Taipei, 23553, Taiwan

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Citation and License

Nanoscale Research Letters 2012, 7:431  doi:10.1186/1556-276X-7-431

Published: 1 August 2012


A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal–semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

GaAs; High-k; MOSFET; Three-dimensional device; FinFET