Evaluation of mesoporous silicon thermal conductivity by electrothermal finite element simulation
1 Laboratoire de Microélectronique de Puissance, GREMAN, Université de Tours, 16 rue Pierre et Marie Curie, BP 7155, Tours, 37071, France
2 STMicroelectronics Tours R&D, 16 rue Pierre et Marie Curie, Tours Cedex, 37071, France
3 Institut des Nanotechnologies de Lyon, Domaine Scientifique de la Doua, INSA de Lyon, Bat. Blaise Pascal, 7 Av. J. Capelle, Villeurbanne Cedex, F-69621, France
Citation and License
Nanoscale Research Letters 2012, 7:427 doi:10.1186/1556-276X-7-427Published: 31 July 2012
The aim of this work is to determine the thermal conductivity of mesoporous silicon (PoSi) by fitting the experimental results with simulated ones. The electrothermal response (resistance versus applied current) of differently designed test lines integrated onto PoSi/silicon substrates and the bulk were compared to the simulations. The PoSi thermal conductivity was the single parameter used to fit the experimental results. The obtained thermal conductivity values were compared with those determined from Raman scattering measurements, and a good agreement between both methods was found. This methodology can be used to easily determine the thermal conductivity value for various porous silicon morphologies.