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Resolution: standard / high Figure 1.
AFM topography of the porous silicon layer formed by the stain-etching technique.
(a) Porous silicon formed on both sides of the samples. (b) 3D AFM topography before treatment with phosphorous.
Lotfi and Hatem Nanoscale Research Letters 2012 7:424 doi:10.1186/1556-276X-7-424 |
