Figure 5 .

Angular dependence in polar coordinates. For R(θ) (a,b,c) and for the corresponding etching rates V = f(θ) (d,e,f), obtained on a (111) wafer (a and d) etched at a current I = 800 mA for t = 10 min and on (100) (b and e) and (110) (c and f) wafers etched at I = 50 mA for t = 70 min.

Astrova and Zharova Nanoscale Research Letters 2012 7:421   doi:10.1186/1556-276X-7-421
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