Figure 10 .

Patterns formed in anodization through a ‘clock’ mask. (а) On a (100) wafer at I = 400 mA and (b) on a (110) wafer at I = 20 mA.

Astrova and Zharova Nanoscale Research Letters 2012 7:421   doi:10.1186/1556-276X-7-421
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