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Isothermal close space sublimation for II-VI semiconductor filling of porous matrices

Vicente Torres-Costa1*, Claudia de Melo2, Aurelio Climent-Font13, Fernando Argulló-Rueda4 and Osvaldo de Melo2*

Author affiliations

1 Applied Physics Department, Faculty of Sciences, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain

2 Physics Faculty, University of Havana, Havana, 10 400, Cuba

3 Centro de Microanálisis de Materiales, Cantoblanco, Madrid, 28049, Spain

4 Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Cantoblanco, Madrid, 28049, Spain

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Citation and License

Nanoscale Research Letters 2012, 7:409  doi:10.1186/1556-276X-7-409

Published: 23 July 2012


Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed determining the composition profiles of the samples. In both cases, a constant composition of the II-VI semiconductors throughout the porous layer down to the substrate was found. Resonance Raman scattering of the ZnTe samples indicates that this semiconductor grows in nanostructured form inside the pores. Results presented in this paper suggest that isothermal close space sublimation is a promising technique for the conformal growth of II-VI semiconductors in porous silicon.

Porous silicon; II-VI semiconductors; Thin films; Nanostructures; Rutherford backscattering spectroscopy; 82.80.Yc; 81.05.Rm; 81.15.Kk