Table 1

Description of the dwell time, etching time, and spacing
Based FIB Si FIB machining parameters Dwell time (μs) Etching time (min) Spacing (nm)
A_1 30 kV voltage and 10 pa accelerate current 1 8 15 ± 1
A_2 1 11 18 ± 1
A_3 5 8 22 ± 2

Gao et al.

Gao et al. Nanoscale Research Letters 2012 7:399   doi:10.1186/1556-276X-7-399

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