Table 1 |
||||
| Description of the dwell time, etching time, and spacing | ||||
| Based FIB Si | FIB machining parameters | Dwell time (μs) | Etching time (min) | Spacing (nm) |
| A_1 | 30 kV voltage and 10 pa accelerate current | 1 | 8 | 15 ± 1 |
| A_2 | 1 | 11 | 18 ± 1 | |
| A_3 | 5 | 8 | 22 ± 2 | |
Gao et al. Nanoscale Research Letters 2012 7:399 doi:10.1186/1556-276X-7-399
