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Effect of etching time on morphological, optical, and electronic properties of silicon nanowires

Nesma Nafie, Manel Abouda Lachiheb and Mongi Bouaicha*

Author Affiliations

Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cedria, BP 95, Hammam-Lif, Tunis, 2050, Tunisia

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Nanoscale Research Letters 2012, 7:393  doi:10.1186/1556-276X-7-393

Published: 16 July 2012


Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet–visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties.

Silicon nanowires; Reflectivity; Light-beam-induced-current; Diffusion length