|
Resolution: standard / high Figure 4.
Diffuse-reflectance UV–vis spectroscopy. The T-NT on Si after anodization at 10 to 60 V and annealing in air at 350 °C. The
anodization time was 1 h. The band gap was about 3.4 to 3.25 eV.
Chappanda et al. Nanoscale Research Letters 2012 7:388 doi:10.1186/1556-276X-7-388 |
