Figure 4.

Diffuse-reflectance UV–vis spectroscopy. The T-NT on Si after anodization at 10 to 60 V and annealing in air at 350 °C. The anodization time was 1 h. The band gap was about 3.4 to 3.25 eV.

Chappanda et al. Nanoscale Research Letters 2012 7:388   doi:10.1186/1556-276X-7-388
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