Table 2

Deviation of the Si wall thicknesses and channel characteristics for the fabricated triple-cavity PhC
m dSi+dair(nm) dSi± δ dSi(nm) ±Δλc1(nm) ±Δλc2(nm) ±Δλc3(nm) λs± Δλs12(nm)λs± Δλs23(nm)
1 1,400 325 ± 35 −22 −46.8 −18.5 153.3 − 24.3
(±10.8 %) 153.3 + 27.7
2 900 360 ± 20 +12.5 +7.7 +12.5 43 − 6
(±5.6 %) 43 + 6
3 900 486 ± 20 +4 +5.6 +5.3 20 − 1
20 + 2
(±4 %)

Baldycheva et al.

Baldycheva et al. Nanoscale Research Letters 2012 7:387   doi:10.1186/1556-276X-7-387

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