Table 2
Deviation of the Si wall thicknesses and channel characteristics for the fabricated triple-cavity PhC
m	dSi +  dair(nm)	dSi ± δ dSi(nm)	±Δλc1(nm)	±Δλc2(nm)	±Δλc3(nm)	λs ± Δλs12(nm)λs ± Δλs23(nm)
1	1,400	325 ± 35	−22	−46.8	−18.5	153.3 − 24.3
		(±10.8 %)				153.3 + 27.7
2	900	360 ± 20	+12.5	+7.7	+12.5	43 − 6
		(±5.6 %)				43 + 6
3	900	486 ± 20	+4	+5.6	+5.3	20 − 1
						20 + 2
		(±4 %)

Baldycheva et al. Nanoscale Research Letters 2012 7:387   doi:10.1186/1556-276X-7-387