Figure 2.

SEM image and transmission spectra of the ideal and fabricated devices. ( a) SEM image of the fabricated device with the thicknesses of the Si walls denoted by numbers. Transmission spectra of the predicted ideal triple-defect device (black line) and the fabricated device (red line) operating within ( b) the first order SB with dSi = 325 nm, (c) the second order SB with dSi = 360 nm and (d) the third order SB with dSi = 486 nm. The structural deviations for the fabricated device are: (b) ± δ dSi= 10.8% (35 nm), (c) 5.6% (20 nm) and (d) 4% (20 nm). The refractive index of allcavities is <a onClick="popup('http://www.nanoscalereslett.com/content/7/1/387/mathml/M13','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/7/1/387/mathml/M13">View MathML</a>.

Baldycheva et al. Nanoscale Research Letters 2012 7:387   doi:10.1186/1556-276X-7-387
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