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Table 1
Magnetization data measured atT = 4 K andT = 250 K
	Coercivity (Oe) magnetic field perpendicular to surface	Coercivity (Oe) magnetic field parallel to surface	Remanence M/M_S(emu) magnetic field perpendicular to surface	Remanence M/M_S(emu) magnetic field parallel to surface
T = 4 K (conv.)	270	180	0.42	0.36
T = 100 K (conv.)	200	110	0.40	0.28
T = 250 K (conv.)	160	75	0.38	0.22
T = 4 K (mag.)	660	190	0.85	0.38
T = 100 K (mag.)	570	125	0.81	0.34
T = 250 K (mag.)	540	100	0.78	0.28

conv., samples prepared by conventional etching; mag., samples prepared by magnetic field-assisted etching.

Granitzer et al. Nanoscale Research Letters 2012 7:384 doi:10.1186/1556-276X-7-384

Table 1