Table 1

Magnetization data measured atT= 4 K andT= 250 K
Coercivity (Oe) magnetic field perpendicular to surface Coercivity (Oe) magnetic field parallel to surface Remanence M/MS(emu) magnetic field perpendicular to surface Remanence M/MS(emu) magnetic field parallel to surface
T = 4 K (conv.) 270 180 0.42 0.36
T = 100 K (conv.) 200 110 0.40 0.28
T = 250 K (conv.) 160 75 0.38 0.22
T = 4 K (mag.) 660 190 0.85 0.38
T = 100 K (mag.) 570 125 0.81 0.34
T = 250 K (mag.) 540 100 0.78 0.28

conv., samples prepared by conventional etching; mag., samples prepared by magnetic field-assisted etching.

Granitzer et al.

Granitzer et al. Nanoscale Research Letters 2012 7:384   doi:10.1186/1556-276X-7-384

Open Data