Figure 2.

AFM images (1 μm × 1 μm) of four-bilayer samples. With the Si spacer overgrowth at 520 °C (sample A), 550 °C (sample B), and 580 °C (sample C).

Liu et al. Nanoscale Research Letters 2012 7:383   doi:10.1186/1556-276X-7-383
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