Table 2 |
||
| Ingredients of a typical NIL resist used in this study and their functions | ||
| Ingredient | wt.% | Function |
| Ia | 1 | Silicon-containing oligomer; increases the viscosity and polarity of resist and provides high cross-linking density |
| IIa | 4 | Silicon-containing oligomer; provides oxygen RIE etching resistance and moderate cross-linking density |
| IIIa | 0.5 | Silicon-containing oligomer; relieves mechanical properties as plasticizer |
| PGMEA | 94.2 | Low-viscosity diluents; improves resist flow for spin coating |
| Diphenyliodonium salt | 0.3 | Photo-initiator; generates cationic acids upon exposure to UV radiation |
aI, II, and III are the same epoxysiloxane samples listed in Table 1.
Zhang et al. Nanoscale Research Letters 2012 7:380 doi:10.1186/1556-276X-7-380
