|Ingredients of a typical NIL resist used in this study and their functions|
|Ia||1||Silicon-containing oligomer; increases the viscosity and polarity of resist and provides high cross-linking density|
|IIa||4||Silicon-containing oligomer; provides oxygen RIE etching resistance and moderate cross-linking density|
|IIIa||0.5||Silicon-containing oligomer; relieves mechanical properties as plasticizer|
|PGMEA||94.2||Low-viscosity diluents; improves resist flow for spin coating|
|Diphenyliodonium salt||0.3||Photo-initiator; generates cationic acids upon exposure to UV radiation|
aI, II, and III are the same epoxysiloxane samples listed in Table 1.
Zhang et al. Nanoscale Research Letters 2012 7:380 doi:10.1186/1556-276X-7-380