Imprint results from the UV-assisted thermal curing NIL using the resist based on epoxysiloxane. (a) Optical micrograph of the microscale features (50-μm pads and microscale fan-outs) that are connected to the nanowires. (b) SEM images of nanoscale fan-outs and nanowires. The inset shows 16 parallel nanowires with a feature size of 50 nm. (c) Optical micrograph of a 1-mm × 100-μm array of fourfold symmetric L-shaped features. (d) SEM image of part of the array. The inset is a zoom-in image of one fourfold symmetric L-shaped feature with the smallest feature size of about 75 nm and a height of 60 nm. (e) SEM image of 30-nm diameter dots in an array of 100-nm pitch.
Zhang et al. Nanoscale Research Letters 2012 7:380 doi:10.1186/1556-276X-7-380