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Electrochemical and galvanic fabrication of a magnetoelectric composite sensor based on InP

Mark-Daniel Gerngross*, Jürgen Carstensen and Helmut Föll

Author Affiliations

Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, Germany

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Nanoscale Research Letters 2012, 7:379  doi:10.1186/1556-276X-7-379

Published: 9 July 2012


A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed by the membrane fabrication and a post-etching step, as well as the galvanic metal filling of membrane structures are presented and discussed. The resistivity of a porous InP structure could be drastically increased and, thus, the piezoelectric performance of the porous InP structure. The developed galvanic Ni filling process is capable to homogeneously fill high aspect-ratio membranes.

porous semiconductors; InP; piezoelectric