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Characterization of Er in porous Si

Guido Mula1*, Susanna Setzu1, Gianluca Manunza1, Roberta Ruffilli2 and Andrea Falqui2

Author affiliations

1 Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria, S.P. 8km 0.700, Monserrato, Cagliari 09042, Italy

2 Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy

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Citation and License

Nanoscale Research Letters 2012, 7:376  doi:10.1186/1556-276X-7-376

Published: 9 July 2012


The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.

Light-emitting devices; Er doping; Porous silicon; Refractive index; 81.05.Rm; 61.43.Gt; 78.20.-e