Characterization of Er in porous Si
1 Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria, S.P. 8km 0.700, Monserrato, Cagliari 09042, Italy
2 Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
Nanoscale Research Letters 2012, 7:376 doi:10.1186/1556-276X-7-376Published: 9 July 2012
The fabrication of porous Si-based Er-doped light-emitting devices is a very promising developing field for all-silicon light emitters. However, while luminescence of Er-doped porous silicon devices has been demonstrated, very little attention has been devoted to the doping process itself. We have undertaken a detailed study of this process, examining the porous silicon matrix from several points of view during and after the doping. In particular, we have found that the Er-doping process shows a threshold level which, as evidenced by the cross correlation of the various techniques used, does depend on the sample thickness and on the doping parameters.