Selective TSV formation by local macropore masking before copper electrochemical deposition. (a) Electrochemical etching of silicon leading to through-silicon structures. (b) Local masking of macropores limiting the electrolyte penetration into opened regions. (c) Local filling of the macropore arrays with copper by electrochemical deposition. (d) Mask removal.
Defforge et al. Nanoscale Research Letters 2012 7:375 doi:10.1186/1556-276X-7-375