Figure 6 .

Tilted SEM images of GaN nanowires. Grown with the Ga source at a distance of 20‚ÄČcm to the substrate on the (a) c-plane GaN and (b) c-plane sapphire substrates.

Hou et al. Nanoscale Research Letters 2012 7:373   doi:10.1186/1556-276X-7-373
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