Figure 1 .

Schematic showing the apparatus for the growth of GaN nanowires using dielectric barrier discharge (DBD). The gallium source was located at the upstream of the reactor at a distance with respect to the substrate, and the DBD was above the substrate.

Hou et al. Nanoscale Research Letters 2012 7:373   doi:10.1186/1556-276X-7-373
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