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Nucleation control for the growth of vertically aligned GaN nanowires

Wen-Chi Hou, Tung-Hsien Wu, Wei-Che Tang and Franklin Chau-Nan Hong*

Author Affiliations

Department of Chemical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, Research Center for Energy Technology and Strategy, National Cheng Kung University, 1 University Road, Tainan, 70101, Taiwan

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Nanoscale Research Letters 2012, 7:373  doi:10.1186/1556-276X-7-373

Published: 7 July 2012


Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN nanowires. In addition, the initial nucleation process is also found to play a key role in creating the high-quality homoepitaxy at the nanowire-substrate interface. By controlling the nucleation stage, the growth of highly aligned vertical GaN nanowire arrays can be achieved. The reasons for the observed effects are discussed.

GaN; Nanowire; Vertically aligned nanowires; Nucleation; Vapor–liquid–solid; Plasma-enhanced CVD; c-plane GaN