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Composition and crystalline properties of TiNi thin films prepared by pulsed laser deposition under vacuum and in ambient Ar gas

Jeong Ok Cha1, Tae Hyun Nam2, Mohammad Alghusun1 and Jeung Sun Ahn1*

Author Affiliations

1 Department of Physics, Kyung Hee University, Seoul, 130-701, South Korea

2 School of Nano and Advanced Materials Engineering, Gyeong Sang National University, Gyeongnam, 660-701, South Korea

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Nanoscale Research Letters 2012, 7:37  doi:10.1186/1556-276X-7-37

Published: 5 January 2012


TiNi shape memory alloy thin films were deposited using the pulsed laser deposition under vacuum and in an ambient Ar gas. Our main purpose is to investigate the influences of ambient Ar gas on the composition and the crystallization temperature of TiNi thin films. The deposited films were characterized by energy-dispersive X-ray spectrometry, a surface profiler, and X-ray diffraction at room temperature. In the case of TiNi thin films deposited in an ambient Ar gas, the compositions of the films were found to be very close to the composition of target when the substrate was placed at the shock front. The in-situ crystallization temperature (ca. 400°C) of the TiNi film prepared at the shock front in an ambient Ar gas was found to be lowered by ca. 100°C in comparison with that of a TiNi film prepared under vacuum.