Figure 6.

Evolution of the porous SiC morphology for a constant applied current density of 63.3 mA/cm2. The cleaved sample was observed (a) near the surface and (b) at 20-μm and (c) 40-μm depths. The observed sample (SEM) was etched from the C face, and the total layer thickness is about 50 μm.

Gautier et al. Nanoscale Research Letters 2012 7:367   doi:10.1186/1556-276X-7-367
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