Evolution of the porous SiC morphology for a constant applied current density of 25.5 mA/cm2. The cleaved sample was observed (a) near the surface and (b) at 20-μm and (c) 40-μm depths. The observed sample (SEM) was etched from the C face, and the total layer thickness is about 40 μm.
Gautier et al. Nanoscale Research Letters 2012 7:367 doi:10.1186/1556-276X-7-367