Figure 3.

Measured potential during the initiation of the pores. The initiation was carried out for a fixed current density of 25.5 mA/cm2 in the case of SiC (C and Si faces). Two samples were etched using the same conditions. As a comparison, the curve for a highly doped silicon wafer is also shown. The samples #1, #2 and #3, #4 are identical.

Gautier et al. Nanoscale Research Letters 2012 7:367   doi:10.1186/1556-276X-7-367
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