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Resolution: standard / high Figure 2.
Measured potential during anodization. The anodization was done at a fixed current density of 25.5 mA/cm2 in the case of the C and Si faces for a 4 H-SiC sample.
Gautier et al. Nanoscale Research Letters 2012 7:367 doi:10.1186/1556-276X-7-367 |
