Figure 5 .

MeasuredI-Vcharacteristics of GO films applied with sweeping voltage of −4.0 to 4.0 V.I-V characteristic of the GO-film-functionalized IDE with high sweeping voltage (-4 to 4 V) at various RH levels.

Yao et al. Nanoscale Research Letters 2012 7:363   doi:10.1186/1556-276X-7-363
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