Photoluminescence characteristics of Cd1-xMnxTe single crystals grown by the vertical Bridgman method
1 Basic Science Research Institute, University of Ulsan, Ulsan, 680-749, South Korea
2 Department of Physics, University of Ulsan, Ulsan, 680-749, South Korea
3 Department of Semiconductor Applications, Ulsan College, Ulsan, 680-749, South Korea
Nanoscale Research Letters 2012, 7:36 doi:10.1186/1556-276X-7-36Published: 5 January 2012
In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors Γ(T) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.