Table 1

ZnO thickness <s> along with simulated results
TA(K) <s > (μm) γ QS= γQD(kJ/mol)
673 6.78(1) 0.26(6) 80
773 4.21 (5) 0.31(2) 99
873 3.23(3) 0.36(3) 114
973 2.72(5) 0.41(3) 130

Results for the lattice and short-circuit diffusion theories over the complete range of annealing temperatures, where QS is the short-circuit activation energy. Lattice activation energy QD = 318 kJ/mol [20].

Shih et al.

Shih et al. Nanoscale Research Letters 2012 7:354   doi:10.1186/1556-276X-7-354

Open Data