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Resolution: standard / high Figure 2.
The surface morphology of GeSi islands. Surface morphology of GeSi islands grown on the nanotip pre-patterned Si (100) substrates
grown at (a) 450 °C for 4 min, (b) 500 °C for 4 min, and (c) 550 °C for 4 min; (d) the cross-sectional high-resolution TEM images of GeSi islands grown at 500 °C.
Tang et al. Nanoscale Research Letters 2012 7:346 doi:10.1186/1556-276X-7-346 |
