Figure 9.

The schematic view of filament formation/dissolution. Schematic view of filament formation/dissolution under SET and RESET operations for w/ and w/o Ti nanolayer resistive switching memories. Filament formation (a) and dissolution (b) for w/o Ti nanolayer devices. Controllable filament formation (c) and dissolution (d) for w/ Ti nanolayer resistive switching memory devices.

Rahaman et al. Nanoscale Research Letters 2012 7:345   doi:10.1186/1556-276X-7-345
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