Figure 7.

Typical I-V hysteresis loop of S1 and S2 devices and cumulative probability of leakage currents. Typical I-V hysteresis loop with 100 consecutive cycles under a CC of 500 μA for (a) S1 and (b) S2 devices. (c) Cumulative probability of leakage currents for S1 and S2 devices.

Rahaman et al. Nanoscale Research Letters 2012 7:345   doi:10.1186/1556-276X-7-345
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