Figure 12.

The typical read endurance and data retention characteristic for the device with Ti nanolayer. (a)Typical read endurance and (b) data retention characteristics for the device with Ti nanolayer at the Cu/TaOxinterface (S2). The device is capable of operation at a low current compliance of 0.1 μA.

Rahaman et al. Nanoscale Research Letters 2012 7:345   doi:10.1186/1556-276X-7-345
Download authors' original image