Figure 3.

Under-mask etching as a function of the PoSi region thickness. The anodizations were performed at 28 mA cm−2 in a HF (30 wt.%)-acetic acid (25 wt.%) electrolyte in p-type 20-mΩ cm silicon.

Defforge et al. Nanoscale Research Letters 2012 7:344   doi:10.1186/1556-276X-7-344
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