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Open Access Nano Express

Plasma-deposited fluoropolymer film mask for local porous silicon formation

Thomas Defforge1*, Marie Capelle12, François Tran-Van3 and Gaël Gautier1

Author affiliations

1 Université François Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France

2 ST Microelectronics, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France

3 Laboratoire de Physico-Chimie des Matériaux et Biomolécules, Université François Rabelais de Tours, EA 6299, Parc de Grandmont, Tours, 37200, France

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Citation and License

Nanoscale Research Letters 2012, 7:344  doi:10.1186/1556-276X-7-344

Published: 26 June 2012


The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates.

Fluoropolymer; Fluorocarbon polymer; Porous silicon localization; Chemical resistance; Inert masking layer