Plasma-deposited fluoropolymer film mask for local porous silicon formation
1 Université François Rabelais de Tours, GREMAN UMR CNRS 7347, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
2 ST Microelectronics, 16 Rue Pierre et Marie Curie, BP 7155, Tours Cedex 2, 37071, France
3 Laboratoire de Physico-Chimie des Matériaux et Biomolécules, Université François Rabelais de Tours, EA 6299, Parc de Grandmont, Tours, 37200, France
Citation and License
Nanoscale Research Letters 2012, 7:344 doi:10.1186/1556-276X-7-344Published: 26 June 2012
The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates.