Figure 4.

Band diagrams of MIS tunneling diodes under (a) accumulation bias and (b) inversion bias. Negative and positive biases applied to the top Al gate correspond to the accumulation and inversion operation biases for the MIS tunneling diodes on a p-type semiconductor.

Lin et al. Nanoscale Research Letters 2012 7:343   doi:10.1186/1556-276X-7-343
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