Figure 3.

Dark and photo-currents versus voltage characteristics of GO and control devices. The inset shows the structures of GO and control devices. The accumulation (negative bias) dark current and inversion (positive bias) photocurrent of the GO device are superior to the control device.

Lin et al. Nanoscale Research Letters 2012 7:343   doi:10.1186/1556-276X-7-343
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