Open Access Nano Express

Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes

Chu-Hsuan Lin1*, Wei-Ting Yeh1, Chun-Hui Chan1 and Chun-Chieh Lin2

Author affiliations

1 Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien, 97401, Taiwan, Republic of China

2 Department of Electrical Engineering, National Dong Hwa University, Hualien, 97401, Taiwan, Republic of China

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Citation and License

Nanoscale Research Letters 2012, 7:343  doi:10.1186/1556-276X-7-343

Published: 1 August 2012

Abstract

In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunneling structure is formed and its optoelectronic properties are studied. The accumulation dark current and inversion photocurrent of the graphene oxide device are superior to the control device. The introduction of graphene oxide improves the rectifying characteristic of the diode and enhances its responsivity as a photodetector. At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device.

Keywords:
graphene oxide; MIS; tunneling diode; photodetector