Figure 4.

TEM and SEM images of a DC device. (a) Cross-sectional TEM image of a DC device with tiny NW covered with Al2O3/TiN GAA stack. 52° tilted SEM images of (b) a mid-sized DC device with a NW cross section of 75 × 30 nm and (c) a large-sized DC device with a NW cross section of 125 × 40 nm.

Su et al. Nanoscale Research Letters 2012 7:339   doi:10.1186/1556-276X-7-339
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