Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique

Nano Express

Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al₂O₃ stack structure using an implant-free technique

Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin^*, Tiao-Yuan Huang and Tien-Sheng Chao

Nanoscale Research Letters 2012, 7:339 doi:10.1186/1556-276X-7-339

No comments have yet been made on this article.