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Investigations of the pore formation in the lead selenide films using glacial acetic acid- and nitric acid-based electrolyte

Sergey P Zimin1*, Egor S Gorlachev12, Viktor V Naumov2 and Fedor O Skok1

Author affiliations

1 Microelectronics Department, Yaroslavl State University, Yaroslavl, 150000, Russia

2 Yaroslavl Branch of the Institute of Physics and Technology of Russian Academy of Sciences, Yaroslavl, 150007, Russia

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Citation and License

Nanoscale Research Letters 2012, 7:338  doi:10.1186/1556-276X-7-338

Published: 22 June 2012


We report a novel synthesis of porous PbSe layers on Si substrates by anodic electrochemical treatment of PbSe/CaF2/Si(111) epitaxial structures in an electrolyte solution based on glacial acetic acid and nitric acid. Electron microscopy, X-ray diffractometry, and local chemical microanalysis investigation results for the porous layers are presented. Average size of the synthesized mesopores with approximately 1010 cm−2 surface density was determined to be 22 nm. The observed phenomenon of the active selenium redeposition on the mesopore walls during anodic treatment is discussed.

Porous semiconductors; Lead selenide; Anodic electrochemical treatment; Electrolyte; Mesopores; 81.05.Rm; 71.20.Nr; 81.65.Cf.